Thank to Idan we now have a new beautiful website...
Finally after 7+ months of renovations, the journey is over...
Our lab is under construction, stay tuned to see the...
We thank the Israeli Science Foundation for supporting our research...
We utilize Surface PhotoVoltage (SPV) and near-UV photoelectron Spectroscopy in order to map the energetic positions of gap states in semiconductors with extremely high sensitivity
We utilize a combination of time-resolved Surface PhotoVoltage and photoluminescence in order to probe charge transfer processes across interfaces and eliminate non-radiative losses. We then simulate and correlate our findings to actual optoelectronic device data
Our interdisciplinary team of researchers strives to unravel the physical properties of defects in novel semiconductors, shedding light on the energetic distribution of defect states within the forbidden gap, as well as their origins and “healing” for future potential applications such as solar cells, light emitting diodes, thin film transistors and more.
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